PURPOSE: To enable the low voltage operation with high sensibility by providing n type dope layer of noncrystal semiconductor mainly composed of silicon, genuine layer and p type dope layer in a semiconductor layer arranged on a substrate while having the photoelectric converting function.
CONSTITUTION: N type dope layer, genuine layer, p type dope layer and noncrystal layers 12, 13, 14 mainly composed of silicon while having the thickness of about 200, 5,000 and 100 in this order are grown on a light-permeable and conductive substrate 10. They are used as the target to form an image pick-up tube. A light is projected from the side face of the substrate 10 of said target while the other face is scanned by an electron beam 16. In said (p) layer 12 it is preferable that the energy of the band width in the basic noncrystal composition containing no acceptor for controlling to p type conductivity is same with that in (i) layer 13.
ISHIHARA SHINICHIROU
MORI KOUSHIROU
HIRAO TAKASHI
OONO MASAHARU
KITAGAWA MASATOSHI
