To provide an image pixel of a CMOS image sensor in which a signal-to-noise ratio, a dynamic range, low illuminance property and elevated temperature operation characteristic are improved.
The image pixel of the CMOS image sensor includes a photoelectric conversion element which is connected with a first node and a ground terminal and forms a signal by an incident light, a current source which is connected with the above first mode and a power supply terminal and supplies a dark current, a first switch which is connected with the power source terminal and the first node and changes the bias of the second node by changing the potential of the node connected to the first node by a signal charge stored in the first node, a second switch which is connected with the first switch, applied by a low selection signal and outputs the potential difference by the signal generated by the photoelectric conversion element to a column selection line, and a third switch which is connected between the first node and the power supply terminal, applied by a reset signal and resets the signal charge stored in the first node.
CHOI WON TAE
KANG SHIN JAE
KO JOO YUL
