Title:
IMAGE SENSING DEVICE AND CMOS IMAGE SENSOR COMPRISING IT
Document Type and Number:
Japanese Patent JP2009147326
Kind Code:
A
Abstract:
To provide an image sensing device and a CMOS image sensor comprising it.
A CMOS image sensor includes: an image sensing device including a p-n junction photodiode and a pattern layer made of a metal substance and formed on an upper surface of the p-n junction photodiode; and a microlens formed above the pattern layer. The metal substance includes at least one selected from the group consisting of gold, silver, copper, aluminum, and tungsten.
Inventors:
JOE IN-SUNG
PARK YOON-DONG
JIN YOUNG-GU
CHANG SEUNG-HYUK
PARK YOON-DONG
JIN YOUNG-GU
CHANG SEUNG-HYUK
Application Number:
JP2008301644A
Publication Date:
July 02, 2009
Filing Date:
November 26, 2008
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L31/10; G02F2/02; H01L27/14; H01L27/146
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
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