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Title:
IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2022165377
Kind Code:
A
Abstract:
To provide an image sensor that has a smaller pixel size and can reduce cross talk between pixels, and provide a method for manufacturing the same.SOLUTION: An IC device 100A comprises a first semiconductor substrate 107 that has a pixel area 114 and a peripheral area 112. Photodetector pixels 126 are arranged in the pixel area 114. A contact pad 103A is arranged in an outer peripheral area 112C. Floating diffusion regions 123 are connected with the photodetector pixels 126 through transfer gates 122. Front side isolation structures 125 are arranged adjacent to the floating diffusion regions 123. Rear side isolation structures 134A include segments 135 that extend between the adjacent photodetector pixels 126 from a rear side 101 toward the inside of the first semiconductor substrate 107. The rear side isolation structures 134A and their segments 135 include in-substrate metal lattices 133A isolated from the first semiconductor substrate 107 with dielectric liner structures 131.SELECTED DRAWING: Figure 1-1

Inventors:
KO TOSHIMINE
YAUNG DUN-NIAN
LIU JEN-CHENG
KUO WEN-CHANG
HUANG SHIH-HAN
Application Number:
JP2022007222A
Publication Date:
October 31, 2022
Filing Date:
January 20, 2022
Export Citation:
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Assignee:
TAIWAN SEMICONDUCTOR MANUFACTUARING CO LTD
International Classes:
H01L27/146
Domestic Patent References:
JP2005294577A2005-10-20
JP2019145737A2019-08-29
JP2013175494A2013-09-05
JPH05102200A1993-04-23
Foreign References:
US20150255495A12015-09-10
WO2019093150A12019-05-16
US20170229494A12017-08-10
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Yusuke Yamaguchi



 
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