Title:
IMAGE SENSOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3414343
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an image sensor in which a transparent electrode formed on an amorphous silicon layer can be protected against disconnection and a method of manufacturing the same.
SOLUTION: An image sensor is equipped with TFTs arranged in an array on a transparent board, an array-like pixel part composed of a first interlayer film, a lower electrode (5 in Fig. 4), an a-Si layer (8 in Fig. 4), a transparent electrode (7 in Fig. 4), and a barrier metal film (8 in Fig. 4) which are laminated, a second interlayer film, and a lead-out wiring (18 in Fig. 4), where the a-Si layer is formed extending continuously from the pixel part to the lead-out wiring region so as to eliminate a stepped part formed at the edge of the a-Si layer, by which an upper electrode and a lead-out wiring such as the transparent electrode and the barrier metal formed on the a-Si later are protected against disconnection, and a light blocking film (3 in Fig. 4) is formed on the same layer with a gate electrode, by which light impinging on the a-Si layer except the pixel region is shut off.
Inventors:
Fumihiko Matsuno
Application Number:
JP33638599A
Publication Date:
June 09, 2003
Filing Date:
November 26, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01L27/04; H01L27/14; H01L27/146; H01L27/148; H01L29/04; H01L31/08; H01L31/10; H04N5/335; H04N5/359; H04N5/369; H04N5/374; H04N5/378; (IPC1-7): H01L27/148; H01L31/10; H04N5/335
Domestic Patent References:
| JP4180264A | ||||
| JP864795A | ||||
| JP59110179A | ||||
| JP6480072A |
Attorney, Agent or Firm:
Asamichi Kato