Title:
撮像素子、撮像素子の製造方法、及び、電子機器
Document Type and Number:
Japanese Patent JP7125345
Kind Code:
B2
Abstract:
The present disclosure relates to an imaging device, a method for manufacturing an imaging device, and an electronic device capable of reducing light entering an electric-charge holding unit in a back-illuminated imaging device. An imaging device includes: a photoelectric conversion unit; an electric-charge holding unit; a semiconductor substrate; a wiring layer; an insulation film layer; a first light-shielding film; and a second light-shielding film. The insulation film layer, the first light-shielding film, and the wiring layer are stacked on a second surface of the semiconductor substrate in order from closest to the second surface, the second surface being opposite to a first surface of the semiconductor substrate, the first surface being at a light receiving side of the semiconductor substrate. The second light-shielding film includes: a first light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate; a second light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and penetrating the semiconductor substrate; and a third light-shielding portion covering a part of the first surface of the semiconductor substrate. The present technology is applicable to a CMOS image sensor, for example.
Inventors:
Naoyuki Sato
Eriko Ohtsu
Eriko Ohtsu
Application Number:
JP2018526383A
Publication Date:
August 24, 2022
Filing Date:
July 04, 2017
Export Citation:
Assignee:
Sony Semiconductor Solutions Corporation
International Classes:
H01L27/146; H04N5/3745
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Foreign References:
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Attorney, Agent or Firm:
Takashi Nishikawa
Yoshio Inamoto
Yoshio Inamoto