To provide an image sensor capable of preventing the generation of a charge sharing phenomenon, while improving the filling factor, and capable of minimizing the number of dark current sources and preventing deterioration in saturation and sensitivity by imparting a smooth transfer path of photocharges between a photodiode and a read-out circuit, and to provide a manufacturing method therefor.

The image sensor includes a first substrate, having a circuit including a wiring, and a photodiode formed on the first substrate, while contacting the wiring, wherein the circuit of the first substrate includes a transistor formed on the first substrate; an electrical junction region formed on one side of the transistor; and a high-concentration first conductivity-type region, formed so as to contact the electric junction region, while being connected to the wiring.