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Title:
撮像素子、積層型撮像素子、撮像装置及び電子装置
Document Type and Number:
Japanese Patent JP6834400
Kind Code:
B2
Abstract:
There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Inventors:
Yasuharu Ujiie
Masakazu Muroyama
Masashi Bando
Masaki Murata
Hideyuki Kumida
Sachiko Sakaikawa
Shintaro Hirata
Yuya Kumagai
Yutaka Kato
Application Number:
JP2016227291A
Publication Date:
February 24, 2021
Filing Date:
November 22, 2016
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L27/146; H01L31/10; H01L51/42
Domestic Patent References:
JP11167215A
JP2016033978A
Foreign References:
WO2016027675A1
WO2011125020A1
Other References:
Ji Hoon Park, et al,Photo-Stable Organic Thin-Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications,ADVANCED FUNCTIONAL MATERIALS 24(2014),ドイツ,2014年,1109-1116,URL,https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201301783
Attorney, Agent or Firm:
Kaoru Watanabe