Title:
IMAGE SENSOR
Document Type and Number:
Japanese Patent JPH01117059
Kind Code:
A
Abstract:
PURPOSE:To decrease capacitive coupling and leakage of current between discrete electrodes, by interposing a semiconductor, thin film between discrete electrodes arranged on an insulating substrate and a common electrode while covering interconnections of the discrete electrodes with said semiconductor thin film. CONSTITUTION:Following to washing an insulating substrate 1, a Cr or Al film is deposited all over the substrate 1 and is patterned by PEP to form discrete electrode 3s and a conductor electrode 25. Then a semiconductor thin film 21 is deposited by the plasma CVD process and slits are formed by PEP to separate the same between interconnections 7 of the discrete electrodes 3. Further, the semiconductor film 21 is patterned into predetermined configuations so as not to make contact with the conductor electrode 25. Subsequently, a transparent conductive film 23 is deposited and excessive parts thereof are removed along the ends of pixel electrodes 9 so as to prevent the image sensor from reading unrequired data.
More Like This:
Inventors:
CHIYOMA HITOSHI
Application Number:
JP27307687A
Publication Date:
May 09, 1989
Filing Date:
October 30, 1987
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L27/14; H01L27/146; H01L31/0248; H01L31/08; H04N1/028; H04N5/335; H04N5/357; (IPC1-7): H01L27/14; H01L31/08; H04N5/335
Domestic Patent References:
| JPS61255059A | 1986-11-12 | |||
| JPS61295659A | 1986-12-26 | |||
| JPS61171161A | 1986-08-01 |
Attorney, Agent or Firm:
Noriyuki Noriyuki (1 person outside)