PURPOSE: To enable an image sensor to be improved in forward current characteristics and lessened in reverse current when it is kept in a dark state by a method wherein a photoelectric conversion layer is composed of two layers, and one of the layers which blocks electrons when image light rays are made to irradiate is formed at a lower temperature than the other layer located on the opposite side.

CONSTITUTION: A metal electrode 3 of chrome is provided onto one surface of an insulating transparent substrate 2 of glass or the like, and N-type doped amorphous hydrogenated silicon layers 4A and 4B as ohmic contact layers are formed thereon providing a gap between them. First non-doped amorphous hydrogenated silicon layers 5A and 5B are provided thereon as photoelectric conversion layers, and second non-doped amorphous generated silicon layers 6A and 6B are laminated thereon. The second silicon layers 6A and 6B are deposited at a lower temperature than the first silicon layers 5A and 5B.