PURPOSE: To manufacture an image sensor in high performance, simple process and excellent yield using an a-Si:H thin film by a method wherein a photodetec tor is composed of an individual electrode formed on an insulating film and a common film successively laminated.

CONSTITUTION: A photodetector in an image sensor on an insulating substrate with multiple photodetectors formed thereon is composed of individual electrodes 2, a p+-a-Sic:H film 3, an i-a-Si:H film 4, an n+-a-Si:H film 5 and a common electrode 6 successively laminated on the insulating substrate 1. At this time, the layers 3∼6 excluding the individual electrode 2 are not subjected to individ ual element isolation. For example, multiple metallic individual electrodes such as Cr, etc., are formed coming into line corresponding to respective elements on the insulating substrate 1 such as glass, etc., while the p+-a-SiC:H film 3, the i-a-Si:H film 4, the n+-a-Si:H film 5 are successively laminated to be formed without element isolation. Furthermore, the common electrode 6 such as ITO, etc., is formed into one body all over the n+-a-Si:H film 5.