Title:
撮像装置および電子機器
Document Type and Number:
Japanese Patent JP7153762
Kind Code:
B2
Abstract:
An image-capturing device which is capable of capturing high quality images and can be formed at a low cost is provided. The image-capturing device includes a first circuit including a first transistor and a second transistor, and a second circuit including a third transistor and a photodiode. The first transistor is provided on a first surface of a silicon substrate. The second transistor is provided over the first transistor. The photodiode is provided to the silicon substrate. The silicon substrate includes a second insulating layer surrounding a side surface of the photodiode. The first transistor is a p-channel transistor including an active region in the silicon substrate. The third transistor is an n-channel transistor including an oxide semiconductor layer as an active layer. A light-receiving surface of the photodiode is a surface of the silicon substrate opposite to the first surface.
Inventors:
Sanpei Yamazaki
Masayuki Sakakura
Kurokawa Yoshimoto
Masayuki Sakakura
Kurokawa Yoshimoto
Application Number:
JP2021073372A
Publication Date:
October 14, 2022
Filing Date:
April 23, 2021
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L27/146; H01L29/786
Domestic Patent References:
| JP2009206356A | ||||
| JP201238981A | ||||
| JP2013175494A | ||||
| JP2005129840A | ||||
| JP2008103668A | ||||
| JP201342481A |