To provide an imaging device capable of executing high-resolution and high-quality image detection, by reducing the number of transistors per pixel and suppressing the fixed pattern noise.
A pixel unit PD1 includes a photodiode 1 and a transfer transistor 2, which are formed in a first active region, and a reset transistor 3 which is formed in a second active region. A pixel unit PD2 includes a photodiode 4 and a transfer transistor 5, which are formed in a first active region, and an amplifier transistor 6, which is formed in a second active region. The configurations of the first and second active regions are identical in the pixel unit PD1 and the pixel unit PD2. Moreover, the reset transistor 3 and the amplifier transistor 6 are shared by the pixel units PD1 and PD2, respectively.
COPYRIGHT: (C)2009,JPO&INPIT
Kubo Hiroshi
Yasuyuki Endo
Masatoshi Kimura
| JP2000232216A |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki