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Title:
IMMERSION TREATMENT TANK FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH0298931
Kind Code:
A
Abstract:

PURPOSE: To enhance a treatment effect and, at the same time, to enhance a uniformity of a treatment by a method wherein a drain port is formed at a treatment tank near a part where a sediment of a treatment liquid inside the treatment tank is produced and a stream of the treatment liquid is produced so that a wafer can be always brought into contact with a new treatment liquid.

CONSTITUTION: A treatment tank 1 houses a wafer contained in a carrier 2 and is used for an immersion treatment; a treatment-liquid supply hole 4 supplies a treatment liquid to the treatment tank 1. A liquid-supply valve 5 is used to supply or stop the treatment liquid to the treatment-liquid supply hole 4; overflow grooves 6 are used to uniformly overflow the treatment liquid inside the treatment tank from an upper-edge face of the treatment tank. Drain holes 7 are used to drain the treatment liquid stagnating at the bottom of the treatment tank to the outside. Thereby, it is possible to prevent sediment near a boundary part between a tank wall of a cornered tank and the bottom and to sufficiently replace it with a new liquid.


Inventors:
SEO YUJI
Application Number:
JP25260888A
Publication Date:
April 11, 1990
Filing Date:
October 05, 1988
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/306; H01L21/304; (IPC1-7): H01L21/304; H01L21/306
Domestic Patent References:
JP56121481B
JPS63263728A1988-10-31
JPH0244727A1990-02-14
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)