To integrate a resistor having a large value in a monolithic manner on an integrated circuit by installing a bias circuit connected to a first current transfer electrode and a gate for a P-channel MOS device, and combined so as to bias the P-channel MOS device to a sub-threshold region.

A transistor 105 works, so as to hold a gate for a transistor 101 at a precise sub-threshold voltage determined by the relative arrangement of the transistor 105 and the transistor 101 and a current mirror. The transistor 105 and the transistor 101 are basically combined as a current mirror so as to be operated in a triode shape or a linear shape with a sub-threshold voltage supplied to the transistor 101. Accordingly, since the transistor 101 can function as a device having extremely high impedance, the transistor 101 functions as a linear device having extremely high impedance, and a resistor having a large value can be integrated.