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Title:
IMPEDANCE TRANSFORMER
Document Type and Number:
Japanese Patent JP3175876
Kind Code:
B2
Abstract:

PURPOSE: To attain miniaturization and wide band of an impedance transformer used for a semiconductor integrated circuit, and to attain the high density, miniaturization, and high performance of the semiconductor integrated circuit.
CONSTITUTION: The impedance transformer is equipped with a first transmission line in which a first dielectric film 21 is formed on a first ground conductor 11, and a first strip-shaped center conductor 31 is formed on the first dielectric film 21. Also, this device is equipped with a second transmission line in which a second dielectric film 22 is formed on a second ground conductor 12, and a second strip-shaped center conductor 32 is formed on the second dielectric film 22. Then, the first transmission line is serially connected with the second transmission line. The thickness of the first dielectric film 21 is made different from that of the second dielectric film 22, and/or the dielectric constant of the dielectric film constituting the first transmission line is made different from that of the dielectric film constituting the second transmission line.


Inventors:
Kazuhiko Toyoda
Tsuneo Tokumitsu
Kenjiro Nishikawa
Application Number:
JP18586393A
Publication Date:
June 11, 2001
Filing Date:
July 28, 1993
Export Citation:
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Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01P1/04; H01P3/08; H01P5/02; (IPC1-7): H01P5/02; H01P3/08
Domestic Patent References:
JP5439551A
JP54101648A
JP5724102A
JP5110311A
JP6291518A
JP377505U
Attorney, Agent or Firm:
Suguru Kusano