METHOD OF ETCHING SILICON OXIDE - NIPPON TELEGRAPH & TELEPHONE

Title:

METHOD OF ETCHING SILICON OXIDE

Document Type and Number:

Japanese Patent JPH0786229

Kind Code:

A

Abstract:

PURPOSE: To form a clean through hole free from overhangs and a residue such as a by product in a multilayer silicon layer formed by silicon oxide layers of different composition.

CONSTITUTION: An oxidized by product 5 of directional etching existing on the side wall. and bottom of a through hole 4 is eliminated by treatment with buffered hydrofluoric acid (BHF) containing ammonium fluoride to form a clean through hole 6.

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Inventors:

KUNII YASUO
KATO SHINICHI
MAEDA MASAHIKO

Application Number:

JP17592593A

Publication Date:

March 31, 1995

Filing Date:

June 24, 1993

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01L21/28; H01L21/306; (IPC1-7): H01L21/306; H01L21/28

Attorney, Agent or Firm:

Masaki Yamakawa

Next Patent: METHOD OF TAPER ETCHING