Title:
IMPROVED CHARGE PUMP CIRCUIT FOR HIGH-TENSION SIDE SWITCH
Document Type and Number:
Japanese Patent JPH08336277
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a charge pump circuit as a high voltage side switch of low noise and high efficiency which can be easily integrated in an integrated circuit together with an MOS gate control power device. SOLUTION: This charge pump circuit consists of the following; a power MOSFET 32 supplying a power supply voltage Vcc to a connected load when it is turned on, a charge pump circuit 40 which outputs a voltage higher than the power supply voltage Vcc to the gate of a power MOSFET 32 and makes it turn on, and a constant current source 53 which is connected between the charge pump circuit 40 and a connection node 52 and makes the reference potential of the charge pump circuit to float.
Inventors:
BURUUNO SE NATSUDO
Application Number:
JP8802596A
Publication Date:
December 17, 1996
Filing Date:
April 10, 1996
Export Citation:
Assignee:
INT RECTIFIER CORP
International Classes:
H01L21/822; H01L29/78; H02M3/07; H03K17/06; H01L27/04; H03K17/16; (IPC1-7): H02M3/07; H01L27/04; H01L21/822; H01L29/78
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)