Title:
半導体膜の改良された堆積方法
Document Type and Number:
Japanese Patent JP5134358
Kind Code:
B2
Abstract:
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Inventors:
Todd Michael A.
Application Number:
JP2007328687A
Publication Date:
January 30, 2013
Filing Date:
December 20, 2007
Export Citation:
Assignee:
ASM America Inc.
International Classes:
C23C16/24; C23C16/02; H01L21/205; C23C16/42; C30B25/02; H01L21/20; H01L21/28; H01L21/285; H01L21/316; H01L21/331; H01L21/337; H01L21/425; H01L21/469; H01L21/8238; H01L27/092; H01L29/51; H01L29/737; H01L29/78; H01L31/18; H01L31/20
Domestic Patent References:
| JP2000038679A | ||||
| JP11330463A | ||||
| JP5062911A | ||||
| JP2000077658A | ||||
| JP6021494A | ||||
| JP10055971A | ||||
| JP9191117A |
Attorney, Agent or Firm:
Fumihiko Yagisawa