Title:
改良された物理蒸着方法及び物理蒸着装置
Document Type and Number:
Japanese Patent JP4564164
Kind Code:
B2
Abstract:
The invention relates to an improved sputter target that is a combination sputter target and induction antenna. In one embodiment, when the sputter target is energized sputter material particles are sputtered away from the sputter target and a plasma is induced.In another embodiment, the sputter target is energized by an energy source. In yet another embodiment, the energy source includes a bias power supply and an induction power supply. The bias power supply applies a potential to the sputter target relative to an object. The induction power supply applies a current to the sputter target. The potential and the current promote the sputtering away of the sputter target, the formation of the plasma and the anisotropic distribution of the sputtered material particles.
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Inventors:
Juwet Russell F.
Benjamin Neil M.
Perry Andrew Jay.
Bahedi Bahid
Benjamin Neil M.
Perry Andrew Jay.
Bahedi Bahid
Application Number:
JP2000513984A
Publication Date:
October 20, 2010
Filing Date:
September 29, 1998
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
C23C14/34; H05H1/46; C23C14/32; H01J37/32; H01J37/34
Domestic Patent References:
| JP7018433A | ||||
| JP5507963A | ||||
| JP8288096A | ||||
| JP7122398A | ||||
| JP8315432A |
Attorney, Agent or Firm:
Takao Igarashi
Takashi Shimoide
Hiroshi Ichikawa
Mitsuhiro Kato
Takashi Shimoide
Hiroshi Ichikawa
Mitsuhiro Kato