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Title:
IMPROVED PRODUCTION OF SILICON DIOXIDE ELECTRET AND IMPROVED ELECTRET OBTAINED BY SAME
Document Type and Number:
Japanese Patent JPH06316766
Kind Code:
A
Abstract:

PURPOSE: To provide a long-life SiO2 electret.

CONSTITUTION: In the process for production of the electret in SiO2 including a first process of forming an SiO2 layer 10 on a solid substrate 5 by direct deposition in a vapor phase starting from a plasma contg. silicon and oxygen, the thus formed layer 10 is heat treated by raising its temp. to above 100°C for a time longer than one hour before being electrically charged. As a result, the electret increased in the expected life is produced.


Inventors:
JIYATSUKU RUINE
DEIDEIE PERINO
Application Number:
JP264094A
Publication Date:
November 15, 1994
Filing Date:
January 14, 1994
Export Citation:
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Assignee:
JIYATSUKU RUINE
DIDIER PERINO
International Classes:
C23C16/40; C23C16/56; H01G7/02; H04R19/01; (IPC1-7): C23C16/56; C23C16/40
Attorney, Agent or Firm:
Akira Asamura (3 outside)



 
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