Title:
INDEPENDENTLY ADDRESSABLE SEMICONDUCTOR LASER EQUIPPED WITH MONOLITHIC PASSIVE WAVEGUIDE OF LOW LOSS
Document Type and Number:
Japanese Patent JPH06216365
Kind Code:
A
Abstract:
PURPOSE: To independently enhance density of addressable semiconductor diode- lasers in a monolithic semiconductor structure. CONSTITUTION: In a monolithic semiconductor structure 40, a passive optical waveguide 58 couples a laterally offset generating waveguide 56 for generating a light wave to a mirror 52. The passive optical waveguide 58 is also coupled to a detecting region for measuring the light intensity in a laser resonant cavity and to an adjustable light-absorbing region for tuning the wavelength of the light wave generated by the generating waveguide 56. Therefore, a basic device can be laterally offset by an electrically passive interconnection of functional devices in the laser resonant cavity. The region of electric crossover is enlarged by the lateral offset and the passive optical interconnection, and as a result, the contacts of independently addressable devices in each chip are significantly simplified and the density and the number thereof can be increased.
Inventors:
TOOMASU ERU PAORI
Application Number:
JP30927393A
Publication Date:
August 05, 1994
Filing Date:
December 09, 1993
Export Citation:
Assignee:
XEROX CORP
International Classes:
B41J2/44; B41J2/45; B41J2/455; G02B26/10; H01L27/15; H01S3/23; H01S5/00; H01S5/026; H01S5/40; H01S5/042; H01S5/06; H01S5/20; H01S5/34; (IPC1-7): H01L27/15; B41J2/44; B41J2/45; B41J2/455; G02B26/10; H01S3/18; H01S3/25
Attorney, Agent or Firm:
Masashi Kobori (1 person outside)
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