To provide an indium metal target capable of improving productivity by increasing a deposition rate (sputter rate) of sputtering in a deposition process of a light-absorbing layer of a thin film solar cell using a compound semiconductor, and a method for manufacturing the target.

In an indium metal target having a tetragonal crystal structure, the sputtering surface of the target is mainly oriented in the (101) plane. In a method for manufacturing an indium metal target, a metal ingot or a slab is prepared by melting and casting an indium metal raw material, and then a target is obtained by cold rolling the ingot or the slab in a sheet-shape, wherein the sputtering surface of the target is made to be mainly oriented in the (101) plane by the cold rolling.