To reduce the occupied area of an MRAM using ferromagnetic/ semiconductor/ferromagnetic materials for a memory for increasing the number of bits per unit area and reduce power consumption.

The memory comprises first and second write word lines 11, 12 formed in parallel with spacings, bit lines 13 disposed between the first and second write word lines 11, 12 crosswise with respect to the lines 11, 12 in a plan view, first information memory elements 14 including magnetic layers formed at the crossings of the first write work lines 11 and the bit lines 13, and second information memory elements 15 including magnetic layers formed at the crossings of the second write work lines 12 and the bit lines 13.