Title:
INFRARED ARRAY DETECTOR
Document Type and Number:
Japanese Patent JPH0590649
Kind Code:
A
Abstract:
PURPOSE:To see that individual picture element information signal can be gotten accurately without being influenced by the signals from neighboring picture element by burying a material layer low in heat conductivity between each of a plurality of infrared detectors arranged in island shape, and forming an upper electrode wiring pattern on the material layer. CONSTITUTION:The section between infrared detectors, which constitute each picture element being made in the shape of an island consisting of a pyroelectric material 14, is filled up with a heat insulating film 18. This heat insulating film 18 is usually a buried oxide film (SiO2 film) used for the manufacture of a silicon integrated circuit. To manufacture a device of such structure, a lower electrode 13 doubling as a heat absorbing film is to be made on the semiconductor substrate 11 where a desired wiring pattern 12 is applied, and then a pyroelectric material 14, and further a material to become an upper electrode 15 doubling as a heat absorbing film is to be stacked, and each infrared detector to become a desired island are to be made. Thus, each infrared detector is thermally separated, so an infrared array detector excellent in the signal isolating properties between each picture element can be gotten.
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Inventors:
SHIBAYAMA KATSUMI
TANAKA AKIMASA
TANAKA AKIMASA
Application Number:
JP25231191A
Publication Date:
April 09, 1993
Filing Date:
September 30, 1991
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
H01L27/148; H01L37/02; (IPC1-7): H01L27/148; H01L37/02
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)