Title:
INFRARED DETECTING ELEMENT
Document Type and Number:
Japanese Patent JP3195443
Kind Code:
B2
Abstract:
PURPOSE: To restrain fracture of film due to difference of internal stress between films sufficiently while facilitating application of micromachining technology by employing a semiconductor thin film, having both infrared ray absorbing function and thermal insulating function, in a thin film resistor.
CONSTITUTION: At an infrared detecting part 2, an amorphous semiconductor thin film C12 for buffering the effect of barrier and a single element semiconductor thin film, i.e., an amorphous semiconductor thin film B14, for providing a good ohmic contact with an electrode 17 are formed sequentially on a thermister layer, i.e., an amorphous semiconductor thin film All having both infrared detecting function and thermal insulating function. The lead out electrode 17 comprises one electrode 17a or 17b and the other electrode 17c, and infrared detection is performed basing on the variation of resistance between the electrodes. Since a semiconductor thin film is employed in the infrared ray absorbing layer and the thin film All serves as both infrared ray absorbing and thermal insulating layers, micromachining technology can be applied easily and fracture of film clue to differential stress in the film is restrained.
Inventors:
Yoshiaki Tomonari
Takuro Nakamura
Takuro Nakamura
Application Number:
JP28638492A
Publication Date:
August 06, 2001
Filing Date:
October 23, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
International Classes:
G01J1/02; G01J5/02; G01J5/20; H01H1/023; (IPC1-7): G01J1/02; G01J5/02
Domestic Patent References:
| JP196549A | ||||
| JP4162683A | ||||
| JP63243817A | ||||
| JP5612521A |
Attorney, Agent or Firm:
Takehiko Matsumoto