PURPOSE: To provide an infrared detector remarkably improving the yield.

CONSTITUTION: An upper electrode 1 is separated in two, a lower electrode 2 is disposed at the position opposed to the two upper electrodes 1, and a signal output wiring part 13 is formed of the two electrodes 1. Since the part 13 is completely covered with an infrared detecting layer 3, even if partly excessive ion milling is conducted due to the irregularity of the thicknesses of the detecting layers among wafers or the irregularity in the surfaces, the disconnection of the signal output part is eliminated at all, and hence, the yield is remarkably improved.