Title:
INFRARED DETECTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS61131571
Kind Code:
A
Abstract:
PURPOSE:To prevent the sensitivity from lowering during the period of baking and during the period of preservation as well as to uphold the noise characteristics by a method wherein a thick oxide film is formed on the surface of the HgCdTe sliced layer containing an impurity in a low concentration and after a baking is performed, the thick oxide film is removed by a water washing method and so forth. CONSTITUTION:An oxide film 6 is formed on one face of an HgCdTe sliced layer 5 containing an N type impurity using an anodizing method, a baking is performed for 5hr or thereabouts at temperatures of 80 deg.C or thereabouts and an N<+> type layer 7 is formed on the interface between the sliced layer 5 and the oxide film 6. Then, the oxide film 6 is removed by a water washing method and the N<+> type layer 7 is adhered on an insulator substrate 8 being set into the lower layer. An oxide film 9 is formed using an anodizing method again, a baking is performed for 5hr or thereabouts at temperatures of 80 deg.C or thereabouts and an N<+> type layer 10 is formed on the interface between the sliced layer 5 and the oxide film 9. The oxide film 9 is removed by a water washing method again. The surface layer is covered with the layers 10 and 5 containing an N type impurity in a high concentration through such the processes and the HgCdTe layer 5 containing an N type impurity in a low concentration is formed as a whole. The N<+> type layer 10 and the layer 5 both function sufficiently as the surface stabilizing films.
Inventors:
HAMASHIMA SHIGEKI
TAKIGAWA HIROSHI
ITO MAKOTO
TAKIGAWA HIROSHI
ITO MAKOTO
Application Number:
JP25293884A
Publication Date:
June 19, 1986
Filing Date:
November 30, 1984
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G01J1/02; H01L31/10; H01L31/18; (IPC1-7): G01J1/02; H01L31/10
Attorney, Agent or Firm:
Seiichi Samukawa