To provide an IR emitting element prevented a bonded wire from failure due to impact when the bonding wire is bonded to each pads, while the response rate being improved.

An insulating layer 2, comprising a porous silicon layer, is formed on one surface side of a silicon substrate 1 being a support substrate. A heat-generating layer 3, having thermal conductivity and an electrical conductivity both of which are respectively larger than those of the heat insulation layer 2 is formed on the heat insulation layer2. A pair of pads 4 and 4 are formed on the heat insulating layer 3. The heat insulating layer 2 has a heat insulating layer 2 comprising a porous silicon layer as a porous layer, formed only on a predetermined region on the one surface side of of the semiconductor substrate 1. In the peripheral portion 1a of the predetermined region in the one surface side of the semiconductor substrate 1, a portion, overlapping each pads 4 and 4 in the thickness direction of the substrate, forms a high-strength structure part having mechanical strength higher than that of the center portion of the insulating layer 2.

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