Title:
INFRARED RAY SENSOR
Document Type and Number:
Japanese Patent JP2001203399
Kind Code:
A
Abstract:
To provide an infrared ray sensor of stable element structure by inserting an adhesion layer between an antimony thin-film and a base material layer formed on the surface of a substrate, which constituting a thin-film thermo couple, for improved adhesion.
In this infrared sensor, incident infrared ray is converted into heat, and the temperature change caused by the heat is detected with a thin-film thermo couple. Here, one of a thermoelectric thin film is an antimony thin film 5, and a thin film 9 comprising any of titanium, nickel, or aluminum is inserted between the antimony thin film 5 and a base material layer 4 formed on the surface of a sensor substrate 1.
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Inventors:
ENDO TOSHIYA
SUGIYAMA DAIKI
SUGIYAMA DAIKI
Application Number:
JP2000012997A
Publication Date:
July 27, 2001
Filing Date:
January 21, 2000
Export Citation:
Assignee:
ALPS ELECTRIC CO LTD
International Classes:
H01L35/32; G01J1/02; G01J5/02; G01J5/12; G01J5/14; H01L35/18; (IPC1-7): H01L35/32; G01J1/02; G01J5/02; G01J5/12; H01L35/18
Attorney, Agent or Firm:
Shunsuke Nakao (2 outside)