Title:
INFRARED RAY SENSOR
Document Type and Number:
Japanese Patent JPH03283579
Kind Code:
A
Abstract:
PURPOSE:To be applied to one-dimensional or two-dimensional image sensor having large number of pixels by providing MOS type transistors each having a charge storage unit of a drain and charge readers provided corresponding to the units. CONSTITUTION:The temperature of a diaphragm is raised in response to an incident infrared ray dose, and an electromotive voltage is thereby generated in a thermopile. This voltage is applied to a first voltage source 12 to be applied to the gate of a MOS type transistor 14 to vary a drain current. The current is stored in a charge storage unit 16 during storing period to become a signal charge. When the period is finished, a transfer gate 17 is turned ON, the stored charges are transferred from the unit 16 to a vertical CCD 18, and simultaneous ly the potential of the unit 16 is reset to a channel potential of the gate 17. The gate 17 is turned OFF, and next storing period is started. In the period, the charges transferred to the CCD 18 are sequentially transferred to an output unit 20 by the operations of the CCD 18 and a horizontal CCD 19, and the signal is externally output.
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Inventors:
TERANISHI SHINICHI
Application Number:
JP8348090A
Publication Date:
December 13, 1991
Filing Date:
March 30, 1990
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L35/32; G01J1/02; H01L27/14; H04N5/33; (IPC1-7): H01L35/32
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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