Title:
赤外線センサとその製造方法
Document Type and Number:
Japanese Patent JP4052041
Kind Code:
B2
Abstract:
To provide an infrared sensor having a new structure and easily manufactured.
A via hole 12 is formed in a silicon substrate 11. Insulative films 14, 15 are disposed at an opening of the via hole 12 and form a membrane. An infrared absorption film 25 is formed on a face in the membrane irradiated by infrared. A n-type polysilicon film 16 and an alminum thin film 18 are formed on the other face in the membrane. A superposition of the films 16, 18 as a thermal contact is located in the membrane and supplied with heat from the infrared absorption film 25.
COPYRIGHT: (C)2004,JPO
Inventors:
Takeshi Fukada
Eiji Kawasaki
Eiji Kawasaki
Application Number:
JP2002195844A
Publication Date:
February 27, 2008
Filing Date:
July 04, 2002
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G01J1/02; G01J5/02; G01J5/12; G01J5/14; H01L35/14; H01L35/32; H01L37/00
Domestic Patent References:
| JP2002090219A | ||||
| JP6342942A | ||||
| JP4076966A | ||||
| JP2000340848A | ||||
| JP2003106894A |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda