Title:
赤外線センサの製造方法
Document Type and Number:
Japanese Patent JP4962837
Kind Code:
B2
Abstract:
An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
Inventors:
Tetsuo Tsuchiya
Susumu Paddy
Toshiya Kumagai
Tokuto Sasaki
Kurashina Haruji
Susumu Paddy
Toshiya Kumagai
Tokuto Sasaki
Kurashina Haruji
Application Number:
JP2006049492A
Publication Date:
June 27, 2012
Filing Date:
February 27, 2006
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
NEC
NEC
International Classes:
G01J1/02; H01L37/00
Domestic Patent References:
| JP2002289931A | ||||
| JP10132653A |
Other References:
Infrared Physics & Technology,2006年 1月,Vol.47 No.3,p.273~277
Journal of Vacuum Science & Technology B,2002年 3月,Vol.20 No.2,p.548~553
Journal of Vacuum Science & Technology B,2002年 3月,Vol.20 No.2,p.548~553
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Takashi Sasaki
Shuichi Fukuda
Takashi Sasaki