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Patent Searching and Data


Title:
INFRARED SENSOR
Document Type and Number:
Japanese Patent JP2000131147
Kind Code:
A
Abstract:

To provide a highly accurate high sensitivity high thermal response infrared sensor which can be mass produced while reducing the size and in which the cold contact temperature of a thermopile can be measured accurately even when an infrared rays enters obliquely.

The thermopile type infrared sensor comprises a semiconductor substrate 1, a lower insulating film 2 provided on one surface thereof, a diaphragm 4 formed of a pit 3 formed by removing a part of the semiconductor substrate to leave the lower insulating film 2 and the lower insulating film 2 covering the pit 3, a thermopile 8 formed on the diaphragm 4, an upper insulating film 9, a thin film thermistor 10 formed thereon, and an interdigital electrode 11 formed on the thin film thermistor 10. Cold contact of the thin film thermistor 10 is located on a heat sink 5 and the thin film thermistor 10 is provided to surround the diaphragm 4.


Inventors:
NAGATOMO KENSHO
Application Number:
JP30256798A
Publication Date:
May 12, 2000
Filing Date:
October 23, 1998
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
H01L35/32; G01J5/16; (IPC1-7): G01J5/16; H01L35/32
Attorney, Agent or Firm:
Tsuyoshi Shigeno