To provide a highly accurate high sensitivity high thermal response infrared sensor which can be mass produced while reducing the size and in which the cold contact temperature of a thermopile can be measured accurately even when an infrared rays enters obliquely.
The thermopile type infrared sensor comprises a semiconductor substrate 1, a lower insulating film 2 provided on one surface thereof, a diaphragm 4 formed of a pit 3 formed by removing a part of the semiconductor substrate to leave the lower insulating film 2 and the lower insulating film 2 covering the pit 3, a thermopile 8 formed on the diaphragm 4, an upper insulating film 9, a thin film thermistor 10 formed thereon, and an interdigital electrode 11 formed on the thin film thermistor 10. Cold contact of the thin film thermistor 10 is located on a heat sink 5 and the thin film thermistor 10 is provided to surround the diaphragm 4.
Next Patent: INFRARED IMAGE PICKUP APPARATUS AND IMAGE DRIFT CORRECTING METHOD