To provide an infrared sensor easy to be manufactured, capable of enhancing mechanical strength, and capable of attaining high sensitivity and a high response speed.
This infrared sensor includes a base substrate 1 of a rectangular plate shape comprising a silicon substrate, a temperature detecting part 3 formed in one surface side of the base substrate 1 to absorb an infrared ray and to detect a temperature change due to the absorption, an infrared absorbing layer 6 layered onto the temperature detecting part 3 to absorb the infrared ray, an insulation part 2 interposed between the base substrate 1 and the temperature detecting part 3 on the one surface side of the base substrate 1 to block heat conduction from the temperature detecting part 3 to the base substrate 1, and a pair of pads 5a, 5b connected electrically to the temperature detecting part 3 on the one surface side of the base substrate 1, via metal wires 4a, 4b. The insulation part 2 is formed of a porous material. The insulation part 2 is constituted of a porous silicon layer formed by making one part of the base substrate 1 porous with anodic oxidation treatment.
ICHIHARA TSUTOMU
WATABE YOSHIFUMI
TSUJI KOJI
KIRIHARA MASAO
Atsuo Mori