To provide an infrared sensor allowing high sensitivity and high response speed.
The infrared sensor includes a base substrate 1, a temperature detection part 3 absorbing infrared rays and detecting temperature variation by the absorption, and a heat insulation part 4 supporting the temperature detection part 3 so that the temperature detection part 3 is separated from one surface of the base substrate 1 and performing heat insulation between the temperature detection part 3 and the base substrate 1. The heat insulation part 4 includes a support part 41 which is separated from the one surface of the base substrate 1 and on which the temperature detection part 3 is stacked on a side reverse to the side of the base substrate 1 and two leg parts 42, 42 connecting the support part 41 and the base substrate 1. The support part 41 includes two heat insulation layers 41a, 41b separated in the thickness direction and a plurality of connection parts 41d connecting both the heat insulation layers 41a, 41b in such a form that a gap 41d between both the heat insulation layers 41a, 41b is held. Each of the heat insulation layers 41a, 41b, each of the connection part 41d, and each of the leg part 42, 42 are formed of porous silicon oxide.
COPYRIGHT: (C)2008,JPO&INPIT
Koji Tsuji
Masao Kirihara
Satoshi Hyodo
Takaaki Yoshihara
| JP2004522162A | ||||
| JP11337403A | ||||
| JP9246508A | ||||
| JP2003294523A | ||||
| JP2005175069A | ||||
| JP2004045339A | ||||
| JP2006524323A |
| WO2004068454A2 | ||||
| US6144030 |