To provide an infrared sensor which includes higher structural stability and is producible in a higher yield, and is capable of raising its sensitivity.

A heat insulation section 4 includes a support section 41 which is arranged separately from one surface of a base board 1 and where a resistance bolometer 3 is formed on the side opposite to the base board 1 side, and two legs 42, 42 uniting the support section 41 and the base board 1 and having wiring conductors 8, 8. The insulation section 4 includes a porous silica film 41a, a first silicon oxide film 41b formed on the silica film 41a on its base board 1 side, a second silicon oxide film 41c formed on the silica film 41a on its side opposite to the base board 1 side, and a metallic thin film 41d formed on the first oxide film 41b on its base board 1 side. The resistance bolometer 3 and the individual wiring conductors 8, 8 includes a Ti film and a TiO2film formed on the Ti film.

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