To provide an infrared solid-state image pickup element of which the resolution is improved without increasing the actual number of pixels.
In an infrared sensor, an infrared absorbing part is supported on a temperature detector. A plurality of the infrared sensors are two- dimensionally arranged on a semiconductor substrate to form the infrared solid- state image pickup element. The infrared solid-state image pickup element comprises the semiconductor substrate, the temperature detectors arranged in a matrix at specific pixel pitches each in the direction of rows and in the direction of columns which intersect each other at right angles on the semiconductor substrate; and the infrared absorbers each supported on the temperature detectors by supporting parts. The infrared absorbers in the even-numbered columns are arranged in such a way as to be displaced by the amount of displacement within the pixel pitch in the direction of the rows to the infrared absorbers provided in the odd-numbered columns.
COPYRIGHT: (C)2004,JPO
Yoshiyuki Nakagi
Masafumi Kimata
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Takuji Yamada
Haruo Nakano