Title:
INJECTION SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH05211348
Kind Code:
A
Abstract:
PURPOSE:To provide a semiconductor light-emitting element to emit visible light. CONSTITUTION:A p-n junction is obtained by joining a ZnSe layer 1 of an n-type conductivity with a ZnTe layer 2 of a p-type conductivity. A forward voltage is applied to this p-n junction and electrons and holes are made to store in the junction part. As the wave functions of the electrons and the holes intrude into a potential barrier, a probability that the functions are superposed on one another and are recombined via a tunnel process to emit is generated. The more the density of the carriers, which are stored in the junction part, is increased by increasing the forward voltage, the keener the angle of a triargular potential in the junction part becomes an acute angle owing to the potential produced by the carriers, the depths of benetration of the wave functions are increased and a probability that the electrons and the holes are recombined via the tunnel process to emit is increased. In such a way, a light emission of a high energy of a least 1.67 eV higher of the band gap of the junction part is obtained. Accordingly, a low-cost light-emitting element to emit visible light is obtained.
Inventors:
NOMURA YOSHITOKU
IMAIZUMI MASAYUKI
OTSUKA KENICHI
YOSHIYASU HAJIME
IMAIZUMI MASAYUKI
OTSUKA KENICHI
YOSHIYASU HAJIME
Application Number:
JP18080591A
Publication Date:
August 20, 1993
Filing Date:
July 22, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L33/04; H01L33/24; H01L33/28; H01S5/00; (IPC1-7): H01L33/00; H01S3/18
Attorney, Agent or Firm:
Mamoru Takada (1 person outside)