Title:
INSOLUBLE POLYVIOLOGEN MODIFIED SEMICONDUCTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3188545
Kind Code:
B2
Abstract:
PURPOSE: To eliminate a coating step with a simple method, in which a polyviologen modified coating is made stable and insoluble in water or organic solvent, by polymerizing a given monomer compound, and covering a surface of a semiconductor with insoluble polyviologen.
CONSTITUTION: When a semiconductor substrate is dipped in a solution of monomer given by a formula (1) or fine semiconductor powder is put in a suspended state and irradiated with light so that a semiconductor photocatalyst reaction is carried out and a polyviologen modified semiconductor is formed. In the formula (1), R1 is a bivalent group selected from alkylene or its organic substitutional groups or a trivalent group selected from alkanetriyl or its organic substitutional groups, X- is a counter-ion, and (m) is 2 or 3. When an electrode of the insoluble polyviologen modified semiconductor is used, a viologen cation radical can be obtained even in an electrochemical method.
Inventors:
Tetsuyuki Siga
Application Number:
JP5213193A
Publication Date:
July 16, 2001
Filing Date:
March 12, 1993
Export Citation:
Assignee:
Japan Science and Technology Agency
Daiso Co., Ltd.
Daiso Co., Ltd.
International Classes:
H01L51/05; C09K3/00; C09K9/00; (IPC1-7): C09K3/00
Domestic Patent References:
| JP4102831A |
Other References:
Ｊ．Ｍａｃｒｏｍｏｌ．Ｓｃｉ．Ｃｈｅｍ．，Ａ２６（２／３），ｐ．５９３−６０８，１９８９
Attorney, Agent or Firm:
Toshio Nishizawa
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