Title:
INSULATED GATE TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPS5357976
Kind Code:
A
Abstract:
PURPOSE: To prevent the decrease in gate threshold voltage owing to the change in channel length by providing a gate region having a recess between the source, drain regions formed on a semicinductor suvstrate surface.
Inventors:
SASAKI ISAO
Application Number:
JP13287276A
Publication Date:
May 25, 1978
Filing Date:
November 05, 1976
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L29/78; H01L21/8247; H01L29/06; H01L29/417; H01L29/788; H01L29/792; (IPC1-7): H01L29/06; H01L29/78