Title:
INSULATED GATE-TYPE TRANSISTOR
Document Type and Number:
Japanese Patent JPS529382
Kind Code:
A
Abstract:
PURPOSE: Required charge is inplanted in floating gate to increase breakdown voltage of the pn junction of drain region of insulated gate-type transistor.
Inventors:
SASAMI TERUTOSHI
Application Number:
JP8657575A
Publication Date:
January 24, 1977
Filing Date:
July 12, 1975
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L29/78; H01L29/06; (IPC1-7): H01L29/06; H01L29/58; H01L29/78
Next Patent: FABRICATION OF SEMICONDUCTOR DEVICE