To obtain an insulation film excellent in insulating properties, low in dielectric constant and further capable of directly forming the film on a metal wiring by substituting a part of metal in an inorganic polymer skeleton having a metal-oxygen-metal bond.
This insulation film is obtained by substituting a part of M in an inorganic polymer skeleton having M-O-M bond (M is an element selected from B, Al, Ti, Ge, etc.), with Si(R1)n [R1 is an alkyl; (n) is 1-3]. The molar ratio of M to Si(R1)n is preferably 0.05-0.75. The objective membrane is obtained by coating a coating liquid for forming the insulation membrane and containing a hydrated product of an alkylalkoxysilane compound of the formula R14-nSi(OR2)n (R2 is an alkyl) (e.g. monomethyltrimethoxysilane) and a hydrating product of an alkoxide of a metal M such as B, Al and Ti on a substrate by a spray coating method, etc., and heat-treating the coated material at 100-500°C.
KATAYAMA SHINGO
YOSHINAGA IKUKO
