PURPOSE: To enable a high-performance integrated circuit device having a micro MOS transistor which can coexist with other integrated circuits using a higher order reference voltage, by using as the gate insulating film a silicon oxide nitride film made by thermally nitriding at least part of an oxide film.
CONSTITUTION: An insulating film made by nitriding at least part of a silicon oxide film is provided as a gate insulating film 3, and a MOSFET having a minimum gate length of 0.6∼0.3μm is provided which is operated with a reference voltage of 5V. That is, an oxide nitride film applied with an oxigen anneal is excellent in the stability of transfer conductance (gn) and the dielectric breakdown characteristics as compared with an oxide film, but, on the other hand, the initial gn value before a stress is applied is reduced to 20∼30% of the oxide film. However, if the voltage is reduced in an oxide film MOSFET, transfer conductance reduces. Therefore, by using such oxide nitride film, a high reliability can be accomplished in a micro device the gate length of which is 0.6μm or smaller.
| JP2020145316 | SEMICONDUCTOR DEVICE |
| JPS62128176 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
MUKAI KIICHIRO
IZAWA RYUICHI
