Title:
集積回路配線形成方法、拡散バリア形成方法並びに窒化層形成方法
Document Type and Number:
Japanese Patent JP4051636
Kind Code:
B2
Abstract:
Nitride layer formation includes a method where a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.
Inventors:
Crane, Rita, Jay.
Application Number:
JP2006318096A
Publication Date:
February 27, 2008
Filing Date:
November 27, 2006
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/28; H01L21/3205; C23C8/02; C23C28/00; H01L21/288; H01L21/768; H01L23/52; H01L23/532
Domestic Patent References:
| JP8306694A | ||||
| JP2000341A | ||||
| JP8078525A | ||||
| JP10079388A | ||||
| JP2000012605A | ||||
| JP2000031296A | ||||
| JP3505802A | ||||
| JP2003529922A |
Foreign References:
| US5275715 |
Attorney, Agent or Firm:
Takenori Hiroe
Takanobu Takekawa
High Shinichi Ara
Tsutomu Nishio
Hiroe Associates Patent Office
Takanobu Takekawa
High Shinichi Ara
Tsutomu Nishio
Hiroe Associates Patent Office