PURPOSE: To make an output current large and to facilitate integration, by forming a PNP type output transistor TR on a chip other than a semiconductor chip, on which a driving circuit for said TR is formed, and making the output TR a longitudinal PNP TR.
CONSTITUTION: On a first semiconductor chip 14 of a constant voltage power source circuit, which is formed as an integrated circuit, a PNP type output transistor TR 15 and a PNP type current detecting TR 16, whose base and collector are commonly connected to the TR 15, a reformed. On a second semiconductor chip 17, the following parts are provided: a comparator circuit 21, in which a voltage at a connecting point of resistors 18 and 19 that divide the collector voltage of the TR 15 is compared with a voltage from a reference power source 20; first and second driving TRs 22 and 23, to which the output of the circuit 21 is applied; and a protecting circuit 24, which is operated in correspondence with the emitter current of the TR 15. The first and second chips 14 and 17 are manufactured by the same manufacturing method of a monolithic integrated circuit chip. Thus the manufacturing is made easy and the output current is made large.
MORIMOTO YOSHIHIDE
TAGASHIRA KAZUO
| JPS55126663U | 1980-09-08 | |||
| JPS5715464A | 1982-01-26 | |||
| JPS5328256A | 1978-03-16 |