To form an RF device in a die of the same integrated circuit only by using a CMOS manufacturing process.

An RF (12) circuit may be formed over a triple well that creates two reverse biased junctions (66a and 66c). By adjusting the bias across the junctions, the capacitance (67a and 67b) across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate (42), improving the self-resonance frequency of inductors (48, 50) and reducing the coupling of unwanted signals and noise from the underlying substrate to the active elements and passive elements such as the capacitors and inductors.