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Title:
トレンチ内に製造した集積化しリリースしたビーム層構成体及びその製造方法
Document Type and Number:
Japanese Patent JP5043298
Kind Code:
B2
Abstract:
A released beam structure fabricated in trench and manufacturing method thereof are provided herein. One embodiment of a released beam structure according to the present invention comprises a semiconductor substrate, a trench, a first conducting layer, and a beam. The trench extends into the semiconductor substrate and has walls. The first conducting layer is positioned over the walls of the trench at selected locations. The beam is positioned with the trench and is connected at a first portion thereof to the semiconductor substrate and movable at a second portion thereof. The second portion of the beam is spaced from the walls of the trench by a selected distance. Therefore, the second portion of the beam is free to move in a plane that is perpendicular or parallel to the surface of the substrate, and could be deflected to electrically contact with the walls of the trench in response to a predetermined acceleration force or a predetermined temperature variation applied on the beam structure. Other beam structures such as a beam held at both ends, or a beam held in the middle are also possible. Several beam structures at different angles can be fabricated simultaneously and mechanical etching stops are automatically formed to prevent unwanted overstress conditions when manufacturing several beam structures at the same time. Beam structures can also be manufactured in three orthogonal directions, providing information on acceleration in any direction.

Inventors:
Richard A. Blanchard
Joseph Sea. McAlexander
Application Number:
JP2004340417A
Publication Date:
October 10, 2012
Filing Date:
November 25, 2004
Export Citation:
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Assignee:
STMicroelectronics,Inc
International Classes:
B81B3/00; G01P15/135; B81C1/00; G01K5/62; G01P15/18
Domestic Patent References:
JP5340959A
JP7209327A
Foreign References:
US5316979
US5610335
US5847454
US6218209
Attorney, Agent or Firm:
Masaaki Kobashi



 
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