INTEGRATION OF AMORPHOUS SILICON TRANSMITTING/RECEIVING STRUCTURE WITH GaAs OR InP PROCESSED DEVICE

Title:

INTEGRATION OF AMORPHOUS SILICON TRANSMITTING/RECEIVING STRUCTURE WITH GaAs OR InP PROCESSED DEVICE

Document Type and Number:

Japanese Patent JP2003133539

Kind Code:

A

Abstract:

To provide an apparatus having a monitoring unit integrated together with various active devices through relatively simple manufacture.

The apparatus integrates an optical energy transmitting and/or receiving function with, for example, the GaAs or InP unit of the active device or, for example, the laser of a light-emitting unit. This apparatus comprises a passivation layer (34) on the active device, an silicon photodetectors (38, 40, and 42) on the layer (34). The photodetectors (38, 40 and 42) may be formed by utilizing a standard solar cell growing process, may be formed as a mesa on the active device or the light-emitting unit. Accordingly, the semiconductor which has the integrated monitoring unit and is not relatively complicated is formed.

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Inventors:

TRAN DEAN
ANDERSON ERIC R
GEORGE J VENTURA JR

Application Number:

JP2002187056A

Publication Date:

May 09, 2003

Filing Date:

June 27, 2002

Export Citation:

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Assignee:

TRW INC

International Classes:

H01L27/14; H01L27/15; H01S5/026; H01S5/02; H01S5/183; H01S5/30; (IPC1-7): H01L27/15; H01L27/14; H01S5/026

Domestic Patent References:

JPS62135461U	1987-08-26
JP2002100829A	2002-04-05

Foreign References:

WO1999043056A1

1999-08-26

Attorney, Agent or Firm:

Kazuo Shamoto (5 outside)

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