Title:
集積装置とその製造方法
Document Type and Number:
Japanese Patent JP5002815
Kind Code:
B2
Abstract:
An integrated device including a sensor and the like formed on a gamma-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a gamma-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the gamma-alumina film is grown; and wiring means for connecting the first function area with the second function area.
Inventors:
Makoto Ishida
Kazuaki Sawada
Daisuke Akai
Kyosuke Hirabayashi
Kazuaki Sawada
Daisuke Akai
Kyosuke Hirabayashi
Application Number:
JP2007520083A
Publication Date:
August 15, 2012
Filing Date:
June 02, 2006
Export Citation:
Assignee:
Toyohashi University of Technology
International Classes:
H01L37/02; G01J1/02; H01L27/144; H01L27/146
Domestic Patent References:
| JP2000088640A | 2000-03-31 | |||
| JPH01136035A | 1989-05-29 | |||
| JPH04158583A | 1992-06-01 | |||
| JP2004281742A | 2004-10-07 | |||
| JP2002261249A | 2002-09-13 | |||
| JPH0989651A | 1997-04-04 |
Attorney, Agent or Firm:
Tomimasa Konishi
Mikiharu Hagino
Mikiharu Hagino